to-220ac ? RHRP3060 pb free plating product RHRP3060 30.0 ampere switchmode single fast recovery epitaxial diode pb ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 internal configuration cathode(bottom side metal heatsink) cathode anode base backside ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature RHRP3060 using lastest fred fab process(planar passivation pellet) with ultrafast and soft recovery characteristics. rev.05 absolute maximum ratings t c electrical characteristics t =25 c unless otherwise specified c =25 c unless otherwise specified symbol parameter test conditions values unit v maximum d.c. reverse voltage r 6 00 v v maximum repetitive reverse voltage rrm 6 00 v i average forward current f(av) t c 30 =110 c , per diode a i rms forward current f(rm s) t c 42 =110 c , per diode a i non - repetitive surge forward current fsm t j 30 0 = 45 c , t=10ms, 50hz, sine a p power dissipation d 1 5 6 w t junction temperature j - 40 to +150 c t storage temperature range stg - 40 to +1 50 c torque modu le - to - sink recommended m 3 1.1 n m r thermal resistance jc junction - to - case 0.8 c /w weight 2.2 g symbol parameter test conditions min. typ. max. unit i reverse leakage current rm v r -- = 6 00 v -- 1 5 a v r = 6 00 v, t j -- = 1 25 c -- 2 50 a v forward voltage f i f -- = 30 a 1. 5 1.8 v i f = 30 a , t j -- = 125 c 1. 3 v t reverse recovery time r r i f = 1 a , v r = 30 v, di f - - /dt= - 2 00a/s 30 -- ns t reverse recovery time r r v r = 3 00 v, i f = 30 a di f /dt= - 2 00a/s, t j -- =25 c 5 1 -- ns i max. reverse recovery current rrm -- 4 .2 -- a t reverse recovery time r r v r = 3 00 v, i f = 30 a di f /dt= - 2 00a/s, t j -- =125 c 1 30 -- ns i max. reverse recovery current rrm -- 9 -- a
? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3 rev.05 ? RHRP3060 i f (a) v f v fig1. forward voltage drop vs forward current t j = 1 25 c t j =25 c 1 0 0 8 0 6 0 4 0 2 0 0 0 0. 5 1.0 2.0 2.5 3.0 di f /dt a/ s fig 2 . reverse recovery time vs di f /dt 1 00 0 8 00 6 00 4 00 2 00 0 0 5 0 t rr ( ns ) 10 0 15 0 20 0 2 5 0 v r = 3 00 v t j =1 25 c i f = 6 0 a i f = 15 a i f = 30 a i rrm (a) di f /dt a/ s fig 3 . reverse recovery current vs di f /dt 50 4 0 30 2 0 10 0 0 200 400 600 800 10 00 di f /dt a/ s fig 4 . reverse recovery charge vs di f /dt 1 00 0 8 00 6 00 4 00 2 00 0 0 5 0 0 q rr ( n c ) 1 0 0 0 1 5 00 2 0 0 0 v r = 3 00 v t j =1 25 c i f = 6 0a i f = 1 5a i f = 30 a v r = 3 00 v t j =1 25 c i f = 6 0a i f = 30 a i f = 15 a k f duty 0.5 0.2 0.1 0.05 single p ulse 0 0. 2 0. 4 1.2 0 .6 1 0 1 10 - 1 10 - 2 10 - 3 z thjc (k/w) 0.8 i rrm q rr t rr t j ( c ) fig 5 . dynamic parameters vs junction temperature 0 25 50 1 00 1 50 1 10 - 1 10 - 2 10 - 3 10 - 4 rectangular pulse duration (seconds) fig 6 . transient thermal impedance 75 125 1.5 1 2 5 0 0
? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3 rev.05 dimensions to-220ac ? RHRP3060 fig 7 . diode reverse recovery t est circuit and waveform i f di f /dt t rr i r rm q rr 0.25 i rrm 0.9 i rrm
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